SnSe2薄膜通常需要使用两套气相沉积系统,而制备SnSe2纳米片更是需要通过化学气相沉积的方法才能获得,因此面临制备成本高,可控性低的问题.该文提供了一种气相沉积方法,一步制备了SnSe和SnSe2薄膜,大大提高了制备效率.该方法只需要控制加热温度,制备过程简单可控.通过一系列的表征手段证明,制备的SnSe薄膜和SnSe2薄膜十分...
SnSe; SnSe2; sputtering deposition; thin films Abstract Tin selenide thin films have been prepared by selenization of sputtered tin layers and have been analyzed comparatively onto bare and SnO2-coated glass substrates. In particular, the effects of the selenization temperature and the polycrystalline ...
electrical conductivity of crystalline semiconductors and insulatorsenergy gaptin compounds/ semiconducting propertiescharacterizationBridgman-Stockbarger techniquequality crystalsdislocation densityThis paper reports the growth of tin monoselenide (SnSe) and tin diselenide (SnSe 2) single crystals by Bridgman-...
为此,鉴于 SnS2与 SnSe2能带匹配且晶格失配度低,把它们组装成 SnS2/SnSe2面内异质结构,将有望解决 SnS2或 SnSe2基传感器在无加热或光照的室温条件下对 NO2响应倍率低且响应/恢复速率慢的问题。 随后,作者在液相中以 SnS2纳米片为...
图5 基于8 nm-Al2O3钝化SnSe2/SnSe异质结PEC探测器在(a)0、0.2、0.4 V偏置电压下的入射光强依赖的光响应行为,以及对应的(b)Iph和(c)Rph值;(d)在0、0.2、0.4 V偏置电压下的波长依赖的光响应行为,以及对应的(e)Iph,(f)Rph和(g)D*值;在偏置电压0.4 V时的(h)响应和(i)恢复时间。
Nois available for this article.doi:10.1002/pssb.2221390237P. EndersJohn Wiley & Sons, Ltd.physica status solidi (b)
Wiedemeyer, The high temperature structure of β-SnS and β-SnSe and the B16 to B33 type lambda transition path, Z. Kristallogr. 156(1-2), 143 (1981).Schnering H G,Wiedemeier H.The high temperature structure ofβ-SnS andβ-SnSe and the B16-to-B33 type lambda transition path...
P–type SnS compound and SnSSesolid solutions were prepared by mechanical alloying followed by spark plasma sintering (SPS) and their thermoelectric properties were then studied in different compositions (x = 0.0, 0.2, 0.5, 0.8) along the directions parallel (//) and perpendicular (⊥) to...
First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS. Phys. Rev. B. 2015, 92, 115202. [CrossRef]Guo R., Wang X., Kuang Y. & Huang B. First-principles study of anisotropic thermoelectric transport properties of iv-vi ...
SnSethermoelectric materialsnanostructureheterogeneousWith the development of nanotechnology, thermoelectric materials with complex heterogeneous nanostructure offer a promising approach to improve the thermoelectric performance. In this work, SnSe/SnS hetero-nanosheet was tuned by the epitaxial growth of SnSe on...