举例来说,一个p-n接面(p-n junction)的能带会弯折,起因是原本p型半导体和n型半导体的费米能阶位置各不相同,但是形成p-n接面后其费米能阶必须保持在同样的高度,造成无论是p型或是n型半导体的传导带或价带都会被弯曲以配合接面处的能带差异。 上述的效应可以用能带图(band diagram)来解释,。在能带图里...
n-nitrosopiperazidine n-p-ntwojunctiontrans n-propanoln-propylalc n-rrbutyl alc n-type wafer n n c sb who has been f n dysentery n growth rate n outbreak n physician n a priori entropy n a net assets n absorbing matter n ac induction motor n adult n after peakafterpeak n air co...
n full power trial n fusca n geared type crank p n geometrical pitch n giant tanker n group valve n gunmetal bronze cas n hatch battens n hatch carlings n heading flash n heat rate n heaving n heavy-lift ship n help and comfort wh n hidden-line n high temperature re n high-strain...
P-N two junction transistor NPN 双结晶体管 n-p-n 双结晶体管 N-P-N type NPN 型 n-p-n-p three junction device n-p-n-p 三结器件 N-P-N-P three junction device NPNP 三结器件 N-P-N-P three junction device NPNP 三结器件 n-p-n-p 三结器件 N-pole N 极 N-truss N 型构...
The parameters for band diagram evaluation have been applied based on the electrons and holes effective mass and the donor and acceptor concentrations and so on. In this work, wide band gap materials of GaN material as a p-type layer and MgZnO material as an n-type layer for the proposed ...
Fig. 5: Vertically stacking heterojunction based on then-hBN/p-GaN. aSchematic of thep-njunction based onn-type h-BN andp-type GaN.bPhotograph of the fabricatedn-hBN/p-GaN junction array on board.cBand diagram of then-hBN/p-GaN junction.d–eLinear and logarithmic I-V curves of thep-...
intrinsic semiconductor, and then it is known as a p-type semiconductor. In this semiconductor, the majority charge carriers are holes whereas minority charge carriers are electrons. The hole’s density is higher than theelectronsdensity. The accepts level mainly lies nearer to the valence band. ...
narrow-band random vibration 窄带随机振动 narrow band spectrum 窄波段 national satellite 国土卫星 national standard 国家标准 natural convection 自然对流 natural electric-field method instrument 自然电场法仪器 natural environment 自然环境 natural field electro-detector 天然场电测仪 ...
An extraction zone of about 150 nm close to the back contact can be realized by a redistribution of the electric field into a nearly field-free region and high field region, as illustrated in the energy band diagram in the right panel of Fig.1a. Such an electric field distribution can ...
n upward spectral ill n valve diagram n vertical mixing n wash place n watch n wedge n weld gage n wire bonding n wire brush n wire electrode seam nv b ncv no bcommercial va ncaesrean birth nd not-dated nemarginatus nfamily photos nfrosti ngengineeringconnecti ngguardiansofnatureit ngma...