zones generated too little voltage for warning, making active quench protection unable to prevent local overheating as magnetic energy turned into very localized heating. A key challenge of HTS magnets is thus the timely detection of small hot spots that grow only at several cm/s, rather than th...
Table 2 also includes trial values. The 65 nm CMOS provides 1 V and 2.5 V transistors. Low, standard and high VTH are available for 1 V CMOS, each of which is shown by lvt, std and hvt in Table 2, respectively. When the total gate width is varied as 1.2, 10 and 20 μm, ...
Designed using a 180 nm CMOS process from TSMC, post-layout simulations demonstrated a DC gain of 44.16 dB, with nominal values for the SCMRR and PSRR measured at 80.50 dB and 72.55 dB, respectively. The front end was shown to consume 3.77 μμW per recording channel, totaling about 60 ...