A brilliant, silvery, metallic element separated from ores of zirconium and used in nuclear reactor control rods, as a getter for oxygen and nitrogen, and in tungsten filament alloys. Atomic number 72; atomic weight 178.49; melting point 2,233°C; boiling point 4,603°C; specific gravity 13....
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Hafnium produces a protective film of oxide or nitride upon contact with air and thus has highcorrosionresistance. Hafnium is fairly resistant to acids and is best dissolved in hydrofluoric acid, in which procedure the formation of anionic fluoro complexes is important in stabilizing the solution. ...
Cas NO.: 12055-23-1 Name: HAFNIUM OXIDE Refractive index: 2.13 (1700 nm) Melting Point: 2812℃ EINECS: 235-013-2Product Description Hangzhou KieRay Chem Co.,Ltd.is located in YuhangDistrict of Hangzhou City and specialized in the chemical product customization,development, sales, import and...
Usage: Intermediate Flash Point: °C Boiling Point: °Cat760mmHg Cas NO.: 12055-23-1 Name: HAFNIUM OXIDE Purity: 99% Brand Name: TIANFU Refractive index: 2.13 (1700 nm) Appearance: Liquid Melting Point: 2812℃ EINECS: 235-013-2Packaging & Delivery Packaging Detail: DRUMProduct...
In addition, hafnium oxide is increasingly being used to augment or replace silicone oxidebased microprocessor chips in certain applications as well as in cathodes and capacitors (Field et al., 2011). Hafnium has a great affinity for absorbing slow neutrons. This attribute, along with itsstrength...
3.The researchers fabricated a prototype circuit incorporating 2,048 hafnium oxide memristors on top of 30,080 CMOS transistors on the same chip. 4.Clean lab at Washington State University with chromatographic columns for separating hafnium from dissolved garnet samples. ...
The white hafnium oxide (HfO2), with a melting point of 2,812 °C and a boiling point of roughly 5,100 °C, is very similar to zirconia, but slightly more basic.[12] Hafnium carbide is the most Refractory binary compound known, with a melting point over 3,890 °C, and hafnium nitr...
Hafnium oxide is a key dielectric for use in many advanced silicon devices. Oxygen vacancies in hafnium oxide largely determine the electronic properties of the material. We show that the electronic transitions between the states due to oxygen vacancies largely determine the optical absorption and ...
Melting Point 2774° TSCA Yes 别名和识别编码 Chemical Name Hafnium(IV) Oxide MDL Number MFCD00003565 PubChem Substance ID 24852038 CAS Number 12055-23-1 EC Number 235-013-2 Merck Number 14,4588 Synonym {uni_hamburg} Hafnium(IV)-oxid Hafnium dioxide (HfO2) Hafnium Oxide HfO2 Hafnia Hafnium...