A volume in Woodhead Publishing Series in Electronic and Optical Materials Book • 2019Edited by: Uwe Schroeder, Cheol Seong Hwang and Hiroshi FunakuboAbout the book Browse this book By table of contents Book description Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices ...
et al. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films. Appl. Phys. Lett. 103, 192904 (2013). Google Scholar Siannas, N. et al. Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5Zr0.5O2. Commun. Phys. 5, 178 (2022). CAS Google Scholar ...
in epitaxial HfO2films with a high degree of structural order (crystallinity). An out-of-plane polarization value of 50 μC cm–2has been observed at room temperature in Y-doped HfO2(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 μC cm–...
As a high-k material,hafnium oxide(HfO_(2))has been used in gate dielectrics for decades.Since the discovery of polar phase in Si-doped HfO_(2) films,chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO_(2) based thin films....
Thus the addition of 8 mol% lanthanide oxide diminishes the tetragonality of the PbTiO3 perovskite structure, changing monotonically when the rare-earth goes from Gd to La. Such decrease in tetragonality allows the normal sintering of PbTiO3. In the case of the CaO additive, addition of at ...
properties of ferroelectric hafnium oxide and its integration into future devices. He is primarily involved in process integration, device characterization, and reliability improvement. Previously, he worked at the Infineon/Qimonda DRAM D...
such as introducing the metal oxide as electrode, annealing the sample above the curie temperature, and irradiating with ultraviolet (UV) light[2,6–8]. However, the ferroelectric fatigue in ion-displacive ferroelectric polarization inevitably happens due to the mobile charge defects (Fig. 1a). ...
(111114)Orientation control of phase transition and ferroelectricity in Al-doped HfO_2 thin flms hafnium oxide have been intensively studied, which are expected to exhibit robust ferroelectricity comparable to the perovskite-based ferroelectrics at nanoscale... HM Yau,X Chen,MW Chi - 《Materials Char...
ferroelectrichafnium oxideferroelectric tunnel junctiontunneling electroresistancebottom electrodeFerroelectric tunnel junctions (FIJs) have attracted research interest ... G Youngin,J Sanghun - 《Nanotechnology》 被引量: 0发表: 2018年 加载更多来源期刊 Journal of Applied Physics 研究点推荐 tunneling electror...
Constrained ferroelectricity in BaTiO3/BaZrO3 superlattices. Appl. Phys. Lett. 2008, 92, 102903. [CrossRef]... PR Choudhury,SB Krupanidhi - 《Applied Physics Letters》 被引量: 0发表: 2008年 Ferroelectricity in hafnium oxide thin films Appl. Phys. Lett. 99, 102903 (2011).T. S. Boscke...